1 infrared light emitting diodes 2.3 1.9 4.5 0.3 2.54 1.2 4.2 0.3 ?.5 0.2 4.8 0.3 2.4 2.4 2.8 12.5 min. 10.0 min. 1.8 1.0 0.45 0.15 2-0.45 0.15 2-0.98 0.2 r1.75 not soldered 1: cathode 2: anode unit : mm 12 LN65 gaas infrared light emitting diode for optical control systems absolute maximum ratings (ta = 25?c) parameter symbol ratings unit power dissipation p d 160 mw forward current (dc) i f 100 ma pulse forward current i fp * 1.5 a reverse voltage (dc) v r 3v operating ambient temperature t opr C25 to +85 ?c storage temperature t stg C 40 to +100 ?c * f = 100 hz, duty cycle = 0.1 % features high-power output, high-efficiency : p o = 5.5 mw (typ.) good radiant power output linearity with respect to input current suited for use in high-speed modulation infrared light emission close to monochromatic light : l p = 950 nm (typ.) electro-optical characteristics (ta = 25?c) parameter symbol conditions min typ max unit radiant power p o i f = 100ma 4.3 5.5 mw peak emission wavelength l p i f = 100ma 950 nm spectral half band width dl i f = 100ma 50 nm forward voltage (dc) v f i f = 100ma 1.3 1.6 v reverse current (dc) i r v r = 3v 10 m a capacitance between pins c t v r = 0v, f = 1mhz 50 pf half-power angle q the angle in which radiant intencity is 50% 35 deg.
2 LN65 infrared light emitting diodes i f ?ta 120 100 80 60 40 20 ambient temperature ta (?c ) allowable forward current i f (ma) 0 20406080100 0 ?25 i fp ?duty cycle 10 2 10 1 10 ? 10 ? duty cycle (%) pulse forward current i fp (a) 10 ? 10 10 2 1 10 ? 10 ? ta = 25?c i f ?v f 120 100 80 40 20 60 0 forward voltage v f (v) ta = 25?c forward current i f (ma) 0 0.4 0.8 1.2 2.0 1.6 d p o ?i f 120 80 40 100 60 20 20 40 60 80 100 120 0 0 ta = 25?c forward current i f (ma) relative radiant power d p o i fp ?v f 10 4 10 3 10 2 10 1 forward voltage v f (v) pulse forward current i fp (ma) 10 ? 0 t w = 10 s duty cycle = 0.1% ta = 25?c 135 24 d p o ?ta 10 1 ambient temperature ta (?c ) relative radiant power d p o ?40 0 40 80 120 i f = 100ma 10 2 10 3 l p ?ta 1000 980 960 940 920 900 ambient temperature ta (?c ) i f = 100ma peak emission wavelength l p (nm) ?40 0 40 80 120 d p o ?i fp 10 3 10 2 10 1 pulse forward current i fp (ma) relative radiant power d p o 10 3 10 4 10 2 10 ? 10 ? 110 t w = 10 s (1) f = 100hz (2) f = 21khz (3) f = 42khz (4) f = 60khz ta = 25?c v f ?ta 1.6 1.2 0.8 0.4 0 ambient temperature ta (?c ) forward voltage v f (v) ?40 0 40 80 120 (1) (2) (3) (4) i f = 100ma 50ma
3 infrared light emitting diodes LN65 spectral characteristics 100 80 60 40 20 wavelength l (nm) relative radiant intensity (%) 900 940 980 1020 1060 1100 0 860 i f = 100ma ta = 25?c frequency characteristics 10 2 10 1 10 ? frequency f (khz) modulation output 10 3 10 4 10 2 10 ? 10 ta = 25?c 0? 10? 20? 30? 40? 50? 60? 70? 80? 90? directivity characteristics 20 90 100 80 70 60 50 40 30 relative radiant intensity(%)
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